?2002 fairchild semiconductor corporation rev. a2, august 2002 2n6517 npn epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted ? refer to 2n6515 for graphs electrical characteristics t a =25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2% symbol parameter value units v cbo collector-base voltage 350 v v ceo collector-emitter voltage 350 v v ebo emitter-base voltage 6 v i c collector current 500 ma p c collector power dissipation 625 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv ceo * collector-emitter breakdown voltage i c =1ma, i b =0 350 v bv cbo collector-base breakdown voltage i c =100 a, i e =0 350 v bv ebo emitter-base breakdown voltage i e =10 a, i c =0 6 v i cbo collector cut-off current v cb =250v, i e =0 50 na i ebo emitter cut-off current v eb =5v, i c =0 50 na h fe * dc current gain i c =1ma, v ce =10v i c =10ma, v ce =10v i c =30ma, v ce =10v i c =50ma, v ce =10v i c =100ma, v ce =10v 20 30 30 20 15 200 200 v ce (sat) collector-emitter saturation voltage i c =10ma, i b =1ma i c =20ma, i b =2ma i c =30ma, i b =3ma i c =50ma, i b =5ma 0.3 0.35 0.5 1 v v v v v be (sat) base-emitter saturation voltage i c =10ma, i b =1ma i c =20ma, i b =2ma i c =30ma, i b =3ma 0.75 0.85 0.9 v v v c ob output capacitance v cb =20v, i e =0, f=1mhz 6 pf f t * current gain bandwidth product i c =10ma, v ce =20v, f=20mhz 40 200 mhz v be (on) base emitter on voltage i c =100ma, v ce =10v 2 v 2n6517 high voltage transistor ? collector-emitter voltage: v ceo =350v ? collector dissipation: p c (max)=625mw ? complement to 2n6520 ? suffix ?-c? means center collector (1. emitter 2. collector 3. base) 1. emitter 2. base 3. collector to-92 1
0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1.02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.10 ?.05 0.38 +0.10 ?.05 to-92 package dimensions 2n6517 dimensions in millimeters ?2002 fairchild semiconductor corporation rev. a2, august 2002
?2002 fairchild semiconductor corporation rev. i1 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? i 2 c? implieddisconnect? isoplanar? littlefet? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? silent switcher ? smart start? spm? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet ? vcx? acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? across the board. around the world.? the power franchise? programmable active droop?
careers | sitema go datasheets, samples, buy technical information applications design center support company investors my f a home >> find products >> product status/pricing/packaging 2n6517 npn epitaxial silicon transistor features back to top applications back to top contents ? features ? applications ? product status/pricing/packaging ? order samples ? models ? qualification support z collector-emitter voltage v ceo =350v z collector dissipation: p c (max)=625mw z complement to 2n6520 z suffix ?-c? means center collector (1. emitter 2. collector 3. base) hi g h volta g e transisto r datasheet download this datasheet e - mail this datasheet this page print version product product status pb-free status pricing* package type leads packing method package marking convention** 2N6517BU full production $0.0296 to - 92 3 bulk line 1: 2n line 2: 6517 line 3: -&3 2n6517cbu full production $0.0296 to - 92 3 bulk line 1: 2n line 2: 6517 line 3: c&3 related links request samples how to order products product change notices (pcns) support sales support quality and reliability design cente r pa g e 1 of 3 product folder - fairch ild p/n 2n6517 - npn e p itaxial silicon transisto r 16-au g -2007 mhtml:file://c:\temp\2n6517cbu.mht
back to top models back to top qualification support click on a product for detailed qualification data 2n6517cta full production $0.033 to - 92 3 ammo line 1: 2n line 2: 6517 line 3: c&3 2n6517cta_nl full production n/a to - 92 3 ammo line 1: 2n line 2: 6517 line 3: c&3 2n6517ta full production $0.0296 to - 92 3 ammo line 1: 2n line 2: 6517 line 3: -&3 * fairchild 1,000 piece budgetary pricing ** a sample button will appear if the part is available through fa irchild's on-line samples program. if there is no sample butt on, please contact a fairchild distributor to obtain samples indicates product with pb -free second-level interconne ct. for more information click here. package marking information for product 2n6517 is available. click here for more information . package & leads condition temperature range vcc range software version revision date pspice to-92-3 electrical/thermal -55c to 150c 0v to 300v 9.2 oct 8, 2003 product 2N6517BU 2n6517cbu 2n6517cta 2n6517cta_nl 2n6517ta pa g e 2 of 3 product folder - fairch ild p/n 2n6517 - npn e p itaxial silicon transisto r 16-au g -2007 mhtml:file://c:\temp\2n6517cbu.mht
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